advanced power p-channel enhancement mode electronics corp. power mosfet simple gate drive bv dss -20v small package outline r ds(on) 800m ? fast switching characteristic i d -550ma rohs compliant & halogen-free description absolute maximum ratings symbol unit v ds v v gs v i d @t a =25 ma i d @t a =70 ma i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 360 /w data and specifications subject to change without notice thermal data parameter 1 201105094 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.003 storage temperature range pulsed drain current 1 -2.5 total power dissipation 0.35 continuous drain current 3 -550 continuous drain current 3 -440 drain-source voltage -20 gate-source voltage + 12 ap1333gu-hf parameter rating halogen-free product d g s sot-323 advanced power mosfets from apec provide the designer with the best combination of fast switching, low on- resistance and cost-effectiveness. g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v ? bv dss / ? t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.01 - v/ r ds(on) static drain-source on-resistance v gs =-10v, i d =-550ma - - 600 m ? v gs =-4.5v, i d =-500ma - - 800 m ? v gs =-2.5v, i d =-300ma - - 1000 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.5 - -1.2 v g fs forward transconductance v ds =-5v, i d =-500ma - 1 - s i dss drain-source leakage current v ds =-20v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-16v ,v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 12v, v ds =0v - - + 100 na q g total gate charge 2 i d =-500ma - 1.7 2.7 nc q gs gate-source charge v ds =-16v - 0.3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 0.4 - nc t d(on) turn-on delay time 2 v ds =-10v - 5 - ns t r rise time i d =-500ma - 8 - ns t d(off) turn-off delay time r g =3.3 ? ,v gs =-5v - 10 - ns t f fall time r d =20 ? -2- ns c iss input capacitance v gs =0v - 66 105.6 pf c oss output capacitance v ds =-10v - 25 - pf c rss reverse transfer capacitance f=1.0mhz - 20 - pf source-drain diode symbol parameter test conditions min. typ. max. unit v sd forward on voltage 2 i s =-300ma, v gs =0v - - -1.2 v notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on fr4 board, t Q 10 sec. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap1333gu-hf
ap1333gu-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c - 5.0v - 4.5v - 3.5v - 2.5v v g = - 2.0v 0.0 0.5 1.0 1.5 2.0 2.5 0.0 0.5 1.0 1.5 2.0 2.5 -v ds , drain-to-source voltage (v) -i d , drain current (a) -5.0v -4.5v -3.5v -2.5v v g = - 2.0v t a = 150 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-0.5a v g = - 4.5v 0.0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1 1.2 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 200 400 600 800 1000 1200 0246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-0.3a t a =25 o c
ap1333gu-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 01234 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -0.5a v ds = -16v 10 100 1357911 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c s ingle pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on)
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